Treatment of low K films with a silylating agent for damage...

Semiconductor device manufacturing: process – Repair or restoration

Reexamination Certificate

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C257SE23077

Reexamination Certificate

active

08034638

ABSTRACT:
The present invention provides methods of repairing damage to low-k dielectric film that is incurred by commonly used processes in IC fabrication. The methods may be integrated into an IC fabrication process flow at various stages. According to various embodiments, the methods of involve performing an IC fabrication process on a wafer on which a low-k film is deposited, and subsequently treating the film with a silylating agent to repair the damage done to the film during the process. Damage repair may be performed after one or more of the damaging process steps.

REFERENCES:
patent: 4768291 (1988-09-01), Palmer
patent: 4882008 (1989-11-01), Garza et al.
patent: 5171393 (1992-12-01), Moffat
patent: 5501739 (1996-03-01), Yamada et al.
patent: 5700844 (1997-12-01), Hedrick et al.
patent: 5789027 (1998-08-01), Watkins et al.
patent: 6114186 (2000-09-01), Jeng et al.
patent: 6140226 (2000-10-01), Grill et al.
patent: 6149828 (2000-11-01), Vaartstra
patent: 6306564 (2001-10-01), Mullee
patent: 6329017 (2001-12-01), Liu et al.
patent: 6329062 (2001-12-01), Gaynor
patent: 6391932 (2002-05-01), Gore et al.
patent: 6444715 (2002-09-01), Mukherjee et al.
patent: 6500770 (2002-12-01), Cheng et al.
patent: 6537896 (2003-03-01), Catabay et al.
patent: 6573131 (2003-06-01), Yan et al.
patent: 6583067 (2003-06-01), Chang et al.
patent: 6673721 (2004-01-01), Kim et al.
patent: 6715498 (2004-04-01), Humayun et al.
patent: 6846380 (2005-01-01), Dickinson et al.
patent: 6943121 (2005-09-01), Leu et al.
patent: 7083991 (2006-08-01), Gaynor
patent: 7176144 (2007-02-01), Wang et al.
patent: 7179758 (2007-02-01), Chakrapani et al.
patent: 7208389 (2007-04-01), Tipton et al.
patent: 7541200 (2009-06-01), Gaynor et al.
patent: 2002/0123240 (2002-09-01), Gallagher et al.
patent: 2002/0164877 (2002-11-01), Catabay et al.
patent: 2002/0192980 (2002-12-01), Hogle et al.
patent: 2003/0008518 (2003-01-01), Chang et al.
patent: 2003/0066544 (2003-04-01), Jur et al.
patent: 2003/0157248 (2003-08-01), Watkins et al.
patent: 2003/0198895 (2003-10-01), Toma et al.
patent: 2004/0096586 (2004-05-01), Schulberg et al.
patent: 2004/0096672 (2004-05-01), Lukas et al.
patent: 2004/0099952 (2004-05-01), Goodner et al.
patent: 2004/0102031 (2004-05-01), Kloster et al.
patent: 2004/0102032 (2004-05-01), Kloster et al.
patent: 2004/0185679 (2004-09-01), Ott et al.
patent: 1-124-252 (2001-08-01), None
Gaynor, Justin F., “In-situ treatment of low-k films with a Silylating Agent After Exposure to Oxidizing Environments,” U.S. Appl. No. 10/056,926, filed Jan. 24, 2002.
U.S, Office Action for U.S. Appl. No. 10/056,926 mailed Feb. 6, 2003.
U.S, Final Office Action for U.S. Appl. No. 10/056,926 mailed Apr. 30, 2004.
U.S, Final Office Action for U.S. Appl. No. 10/056,926 mailed May 6, 2004.
U.S, Final Office Action for U.S. Appl. No. 10/056,926 mailed Dec. 10, 2004.
U.S, Final Office Action for U.S. Appl. No. 10/056,926 mailed Dec. 27, 2004.
Gaynor, Justin F., “Method of In-Situ Treatment of Low-K Films With a Silylating Agent After Exposure to Oxidizing Environments,” U.S. Appl. No. 11/065,624, filed Feb. 24, 2005.
U.S, Final Office Action for U.S. Appl. No. 11/065,624 mailed Sep. 7, 2005.
Notice of Allowance for U.S. Appl. No. 11/065,624 mailed Feb. 16, 2006.
Gaynor, Justin F., “Treatment of Low K Films With a Silylating Agent for Damage Repair,” U.S. Appl. No. 11/476,426, filed Jun. 27, 2006.
U.S, Office Action for U.S. Appl. No. 11/476,426 mailed Apr. 10, 2008.
Notice of Allowance for U.S. Appl. No. 11/476,426 mailed , Jan. 28, 2009.
Humayun et al., U.S. Appl. No. 10/404,693, filed Mar. 31, 2003.
Tipton et al., U.S. Appl. No. 10/672,305, filed Sep. 26, 2003.
U.S. Appl. No. 10/672,311, Office Action mailed Sep. 7, 2004.
U.S. Appl. No. 10/672,311, Office Action mailed Dec. 28, 2004.
U.S. Appl. No. 10/672,311, Final Office Action mailed Jul. 13, 2005.
U.S. Appl. No. 10/672,311, Office Action mailed Dec. 20, 2005.
U.S. Appl. No. 10/672,311, Notice of Allowance mailed May 22, 2006.
U.S. Appl. No. 10/672,311, Allowed Claims as of May 22, 2006.
U.S. Appl. No. 10/785,235, Office Action mailed Jul. 27, 2005.
U.S. Appl. No. 10/785,235, Final Office Action mailed Jan. 9, 2006.
U.S. Appl. No. 10/785,235, Office Action mailed May 30, 2006.
U.S. Appl. No. 10/785,235, Notice of Allowance mailed Oct. 3, 2006.
U.S. Appl. No. 10/785,235, Allowed Claims as of Oct. 3, 2006.
U.S. Appl. No. 10/672,305 (abandoned), Office Action mailed Mar. 22, 2005.
U.S. Appl. No. 10/672,305 (abandoned), Final Office Action mailed Sep. 1, 2005.
U.S. Appl. No. 10/672,305 (abandoned), Office Action mailed Feb. 7, 2006.
U.S. Appl. No. 10/672,305 (abandoned), Office Action mailed Jul. 12, 2006.
U.S. Appl. No. 10/672,305 (abandoned), Final Office Action mailed Feb. 2, 2007.
U.S. Appl. No. 10/404,693, Office Action mailed Mar. 15, 2005.
U.S. Appl. No. 10/404,693, Final Office Action mailed Aug. 24, 2005.
U.S. Appl. No. 10/404,693, Office Action mailed Feb. 28, 2006.
U.S. Appl. No. 10/404,693, Final Office Action mailed Sep. 8, 2006.
U.S. Appl. No. 10/404,693, Office Action mailed Aug. 14, 2007.
Cho et al., “Plasma Treatments for Molecularly Templated Nanoporous Silica Films” Electrochemical and Solid State Letters 4(4) G35-G38 (2001).

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