Treatment of a surface having an exposed silicon/silica interfac

Details Treatment of a surface having an exposed silicon/silica interfac Treatment of a surface having an exposed silicon/silica interfac

1997-07-14

2000-08-15

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438691, 438693, 438743, 438756, H01L 21302

Patent

active

061036277

ABSTRACT:
A chemical mechanical polishing step is performed to expose a silicon/silicon dioxide interface on a surface situated on a semiconductor substrate. The semiconductor substrate is dipped in a solution of about 200 parts of deionized water, about 1 part of hydrofluoric acid, and at least 5 parts tetramethyl ammonium hydroxide. The exposed silicon/silicon dioxide interface is then contacted with an organic carboxylic acid surfactant having a critical micelle concentration greater than or equal to 10.sup.-7 m/l and having a pH from about 2.2 to about 7. Lastly, the exposed silicon/silicon dioxide interface is rinsed in deionized water or sulfuric acid to remove silicon dioxide particles from the exposed silicon/silicon dioxide interface, leaving a very clean, low particulate surface on both the silicon dioxide and silicon portions thereof, with little or no etching of the silicon portion.

REFERENCES:
patent: 5389194 (1995-02-01), Rostoker et al.
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patent: 5498293 (1996-03-01), Ilardi et al.
patent: 5783495 (1998-07-01), Li et al.
patent: 5827781 (1998-10-01), Skrovan et al.
patent: 5853522 (1998-12-01), Krusell et al.

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