Treatment method of semiconductor, method for manufacturing...

Details Treatment method of semiconductor, method for manufacturing... Treatment method of semiconductor, method for manufacturing...

2006-12-18

2010-12-28

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

C257SE21245, C257SE21420, C257SE21431, C438S360000, C438S429000, C438S442000, C438S689000, C438S706000

Reexamination Certificate

active

07858529

ABSTRACT:
The method of the present invention includes providing a semiconductor substrate with a recess; performing a pre-cleaning step on the semiconductor substrate; and performing a first reduction step, a lateral etching step and a second reduction step on the semiconductor substrate. The MOS structure includes a semiconductor substrate, a gate structure on the semiconductor substrate, a pair of recesses with beak sections extending to and under the gate structure, and a strain material filling the recess. The recess inside the semiconductor substrate processed by the method including the lateral etching step forms a beak section.

REFERENCES:
patent: 5904574 (1999-05-01), Nishijima
patent: 7611951 (2009-11-01), Ueno et al.
patent: 2002/0106892 (2002-08-01), Shibata
patent: 2006/0148220 (2006-07-01), Lindert et al.
patent: 2006/0151808 (2006-07-01), Chen
patent: 2006/0166492 (2006-07-01), Orlowski
patent: 2007/0269952 (2007-11-01), Chong et al.
patent: 200625523 (2006-07-01), None
patent: I260091 (2006-08-01), None
patent: I262597 (2006-09-01), None
ULSI Technology, Sze, 1996 (ISBN:0-07-114105-7), p. 354-355.

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