Treatment method for semiconductor substrates

Details Treatment method for semiconductor substrates Treatment method for semiconductor substrates

1999-08-27

2000-11-14

Carrillo, Sharidan

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 2, 134 254, 134 26, 134 28, 134 29, 134 34, 134 36, 134 39, 134 40, 134 41, 134902, 510175, 510176, 510367, 510477, C23G 102

Patent

active

061464678

ABSTRACT:
A method of treating a semiconductor substrate by first oxidizing and reducing the semiconductor substrate by immersion in an aqueous solution of ammonium hydroxide and hydrogen peroxide, and then oxidizing the semiconductor substrate by immersion in an aqueous solution of ozone, nitric acid, hydrogen peroxide, or mixtures thereof, and then reducing the oxidized semiconductor substrate by immersing it in a first aqueous solution composed of a mixture of hydrofluoric acid and an organic acid or salt thereof, thereafter rinsing the reduced semiconductor substrate by immersion in a second aqueous solution composed of a mixture of hydrofluoric acid and an organic acid or salt thereof, and then reoxidizing the rinsed semiconductor substrate by immersing it in an aqueous solution of ozone, nitric acid, hydrogen peroxide or mixtures thereof.

REFERENCES:
patent: 5470393 (1995-11-01), Fukazawa
patent: 5637151 (1997-06-01), Schulz
patent: 5679171 (1997-10-01), Saga et al.
patent: 5810940 (1998-09-01), Fukazawa et al.
patent: 5932022 (1999-08-01), Linn et al.
patent: 5938857 (1999-08-01), Fujiwara et al.

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