Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2011-01-04
2011-01-04
Luu, Chuong A (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S455000, C257SE21212
Reexamination Certificate
active
07863158
ABSTRACT:
A method and/or system are provided for producing a structure comprising a thin layer of semiconductor material on a substrate. The method includes creating an area of embrittlement in the thickness of a donor substrate, bonding the donor substrate with a support substrate and detaching the donor substrate at the level of the area of embrittlement to transfer a thin layer of the donor substrate onto the support substrate. The method also includes thermal treatment of this resulting structure to stabilize the bonding interface between the thin layer and the substrate support. The invention also relates to the structures obtained by such a process.
REFERENCES:
patent: 3332137 (1967-07-01), Kenney
patent: 3355636 (1967-11-01), Becke et al.
patent: 3997381 (1976-12-01), Wanlass
patent: 4540452 (1985-09-01), Croset et al.
patent: 4601779 (1986-07-01), Abernathey et al.
patent: 4649627 (1987-03-01), Abernathey et al.
patent: 4704785 (1987-11-01), Curran
patent: 4771016 (1988-09-01), Bajor et al.
patent: 4794217 (1988-12-01), Quen et al.
patent: 6146979 (2000-11-01), Henley et al.
patent: 6362076 (2002-03-01), Inazuki et al.
patent: 6403450 (2002-06-01), Maleville et al.
patent: 6849901 (2005-02-01), Falster
patent: 6962858 (2005-11-01), Neyret et al.
patent: 2004/0060900 (2004-04-01), Waldhauer et al.
patent: 2004/0248380 (2004-12-01), Aulnette et al.
patent: 2005/0014346 (2005-01-01), Mitani et al.
patent: 2005/0042840 (2005-02-01), Aga et al.
patent: 2006/0177993 (2006-08-01), Endo et al.
patent: 2007/0173033 (2007-07-01), Allibert et al.
patent: 1 100 127 (2001-05-01), None
patent: 1 542 274 (2005-06-01), None
patent: 9260618 (1997-10-01), None
patent: 2006013179 (2006-01-01), None
patent: WO 03/005434 (2003-01-01), None
patent: WO 03/005434 (2003-01-01), None
Mar. 10, 2010 Examination Report from the Chinese Patent Office.
RCA Review, Reactor Gas Flow Patterns, Semiconductor Materials and Processes, Part 2: Preparation and Properties, Comparison of Different SOI Technologies: Assets and Liabilities, L. Jastrzebski, RCA Laboratories, Princeton, NJ, RCA Review, vol. 44, Jun. 1983, pp. 250-269.
Bonding of Silicon Wafers for Silicon-On-Insulator, W.P. Maszara, et al. , Aerospace Technology Center, Allied Signal Aerospace Company, J. Appl. Phys. 64 (10), Nov. 15, 1988, pp. 4943-4950.
Bonding Silicon Wafers by Use of Electrostatic Fields Followed by Rapid Thermal Heating, Materials Letters, vol. 4, No. 11.12, Oct. 1986, pp. 461-464.
Submicron Integrated Circuits, R.K. Watts, A Wiley-Interscience Publication, TK7874.I5469 1989, pp. 434-469.
A Newly Developed Silicon to Silicon Direct Adhesion Method, Shimbo et al., Toshiba Res. & Dev. Center, Toshiba Corp., pp. 337-338, 1990.
Second International Symposium on Semi-Conductor Wafer & Bonding: Science, Technology and applications, R.D. Horning an R.R. Martin, Honeywell, Inc., PV 93-29, pp. 199, 1993.
INPI, Notification D'un Rapport de Recherche Preliminaire Avec Reponse Obligatoire, Paris, 28 Fevrier 2007.
Kerdiles Sébastien
Neyret Eric
Doan Nga
Edwards Angell Palmer & & Dodge LLP
Luu Chuong A
Neuner, Esq. George W.
Pollack, Esq. Brian R.
LandOfFree
Treatment for bonding interface stabilization does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Treatment for bonding interface stabilization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Treatment for bonding interface stabilization will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2707624