Treatment basin for semiconductor material

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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Details

156640, 156642, 269 21, B44C 122, C03C 1500, C03C 2506, H01L 21306

Patent

active

046004637

ABSTRACT:
The present invention relates a basin for applying a treatment such as development, etching or plating to one of surfaces of a semiconductor material. A treatment liquid is introduced through a passage formed in a lower part of the basin. Then, the treatment liquid is blown upwardly against the semiconductor material held spacedly above a top portion of the basin. The top portion of the basin centrally defines a hole permitting the passage of the treatment liquid therethrough and is formed into a table surface having an area wider than the one surface of the semiconductor material. At the outer circumferential edge of the semiconductor material, the treatment liquid is allowed to flow in a laminar state outwardly along the table surface. Thus, the treatment liquid is prevented from running astray onto the rear surface of the semiconductor material. Since the treatment liquid is caused to flow between the semiconductor material and the table surface, good contact is maintained between the semiconductor material and the treatment liquid and the semiconductor can be kept free from air and gas bubbles which would otherwise stick on the semiconductor surface.

REFERENCES:
patent: 2523018 (1950-09-01), Henderson
patent: 4021279 (1977-05-01), Hirs
patent: 4165252 (1979-08-01), Gibbs
patent: 4339297 (1982-07-01), Aigo
patent: 4350562 (1982-09-01), Bonu

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