Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Reexamination Certificate
1999-11-10
2003-01-28
Dang, Thi (Department: 1763)
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
C204S298340, C204S298360
Reexamination Certificate
active
06511575
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a treating apparatus and method for treating a surface of an object such as etching, ashing, cleaning, surface-reforming or the like. In particular, the present invention pertains to a technical field of a treating apparatus and method for carrying out surface treatment of a surface of an object by employing a negative hydrogen ion. Further, the present invention pertains to a technical field of a method for manufacturing a semiconductor device for surface-treating the inside of a groove such as a contact hole or the like, or a surface to be treated consisting of electric conductors in a wiring (electrode) forming step in a manufacturing process of the semiconductor device, and then, depositing the conductor on the inside of the groove or on the surface of the conductor.
2. Related Background Art
In a surface treatment such as conventional plasma etching, a positive ion has been utilized.
In
FIG. 30
, there is shown a cross section of a conventional parallel flat-plate type plasma treating apparatus. In
FIG. 30
, reference numeral
201
denotes a high-frequency power source; reference numeral
202
denotes support means compatible with an electrode to which a high-frequency power is applied; W denotes a semiconductor substrate as an object; IS denotes an ion sheath; PM denotes plasma; reference numeral
206
denotes a vacuum container; reference numeral
205
denotes a grounded opposite electrode; reference numeral
203
denotes a process gas introducing inlet; and reference numeral
204
denotes an air exhaust port. In this apparatus, when a high frequency is applied to the support means
202
, plasma PM is generated between the support means and an opposite electrode installed in parallel to a substrate. At this time, between the plasma and the support means
202
and between the plasma and the vacuum container
206
, an electron depletion area called an ion sheath “IS” is generated due to a difference in easiness of movement of the ion and electron in the plasma, and the plasma becomes a positive potential to the electrode on average. In the support means
202
, to which a high frequency is applied, a potential difference against the plasma is greater than the grounded opposite electrode
205
, and some hundreds of volts are produced at maximum. A positive ion in the plasma is accelerated by a potential of such a sheath, and the accelerated ion is incident with a certain energy. A substrate surface is etched and cleaned utilizing this positive ion. In a process for manufacturing the semiconductor device, only the positive ion is utilized as described above, and a negative ion is not utilized. However, recently, attention has focused on the negative ion in plasma processing, and there have been proposed some plasma treatment methods utilizing a negative ion.
For example, in Japanese Patent Application Laid-Open No. 8-181125, there is disclosed a plasma etching treatment in which a substrate surface is alternately irradiated with positive and negative oxygen ions utilizing an after-grow plasma of oxygen in order to ensure electrification with a substrate.
In addition, in Japanese Patent Application Laid-Open No. 9-82689, there is disclosed a plasma treating apparatus for treating a substrate by neutral active particles without employing electrified particles such as ions. Similarly, in T. Mizutani and S. Nishimatsu; “Sputtering Yield and Radiation Damage by Neutral Beam Bombardment”, J. Vac. Sci. & Technol., Vol. A6, p1417, (1988), there is disclosed plasma treatment using neutral particles.
Further, in Japanese Patent Application Laid-Open No. 7-122539, there is disclosed a surface treatment method for supplying negative fluorine ion beams of 20 eV or less to a hydrogen dissociated and adsorbed silicon oxide, and etching the silicon oxide.
Plasma cleaning treatment as well as plasma etching are applied to a semiconductor device manufacturing process. In the semiconductor device, when a connection between an impurities diffusion layer formed on a surface side of a substrate and a metal wiring layer is made via a contact hole provided at an insulation layer, an aspect ratio of the contact hole (depth/aperture dimensions) greatly exceeds 1. Therefore; as a method for forming a wiring metal film in the contact hole, there is used a sputter method, and as a method for embedding the contact hole even if the aspect ratio is 2 or more, there is used a chemical air phase growth method (CVD method). Tungsten, aluminum, copper, gold or the like are considered for embedding metal into a fine contact hole using the CVD) method. With respect to aluminum, a high-quality film and a high filling speed are achieved with a heat CVD method using DMAH (dimethyl aluminum hydride) and hydrogen, and attention is focused on it as a material for embedding the contact hole, which is the second best to tungsten.
An aluminum wire forming process with the CVD method is carried out as follows: First, after a contact hole has been formed on an insulation film by dry etching and a backing conductive film such as titanium nitrate, called a barrier metal, is formed on a whole substrate surface, including the inside of the contact hole and the insulation film surface. Next, in the case of a contaminating substance on the surface of the barrier metal (for example, titanium barrier metal), cleaning is carried out using plasmas in order to eliminate titanium oxides. Further, a substrate is carried into a CVD chamber without being exposed to atmosphere, and an aluminum film is deposited using DMAH and hydrogen.
Here, in plasma cleaning before depositing aluminum, there are known a method for sputtering a barrier metal surface using inert gas plasmas such as argon, a method for etching a barrier metal surface using plasmas of halogen gas such as chlorine (refer to Japanese Patent Application Laid-Open No. 7-226387), and a method for reducing and eliminating a natural oxide film on a barrier metal surface using hydrogen plasmas (refer to Japanese Patent Application Laid-Open No. 8-298288).
In a conventionally employed positive ion treatment, a positive electric charge is accumulated on a surface of an object during treatment, and the surface potential of the object is electrified with a high positive potential. Even if neutral particles are used, secondary electron emission due to energy shock of neutral particles incident to the object takes place in similar fashion, the surface of the object is positively charged. Even during alternate irradiation of positive and negative ions, although the extent of the electric charge is less than that of only a positive ion treatment, secondary electron emission due to positive ion incidence is not eliminated. Thus, the surface is charged with a high positive potential.
In addition, in cleaning of the conductor surface, oxides cannot be fully eliminated by negative oxygen ions considering metal properties such as continuously deposited aluminum or backing conductor properties. In negative halogen ions, a new design is required for preventing conductor corrosion due to the residual halogen. Even if hydrogen is used, since positive hydrogen ions are primarily used for a conventional plasma treatment, the aforementioned electrification problem will occur.
In particular, when a surface has a groove, specifically, when the surface has irregularities caused by etching patterns or the like, a groove shape failure or a cleaning failure in the groove will often occur.
Thus, charge damage due to charging will occur in the conventional method.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a treating apparatus and method in which damage due to charging is suppressed, and a surface can be surface-treated in a proper state.
It is another object of the present invention to provide a method for manufacturing a semiconductor device in which damage due to electrification is suppressed, and a proper electronic contact state can be obtained when surface treatment of a surface co
Furukawa Masakazu
Kitagawa Hideo
Shindo Haruo
Canon Kabushiki Kaisha
Dang Thi
Fitzpatrick ,Cella, Harper & Scinto
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