Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1986-07-15
1988-03-22
Wan, Gene
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330 54, H03F 360
Patent
active
047331950
ABSTRACT:
A travelling-wave transistor structure (50) with the input and output transmission lines (54,58) terminated with unmatched impedances (70,72,74;80,82,84) to improve high-frequency response by reflection and phase shift to provide constructive interference is disclosed. Preferred embodiments include a .pi.-gate (52,56) MESFET structure travelling-wave transistor with many periodically spaced gate feeding fingers (56) connecting gate (52) to gate transmission line (54) which parallels gate (52). This provides a compact structure and has large advantages at millimeter wave frequencies. Source (60) may be grounded by vias (61) or may pass over gate transmission line (54) by air bridges to a ground on the same surface as the MESFET.
REFERENCES:
patent: 4543535 (1985-09-01), Ayasli
Kim Bum-man
Tserng Hua Q.
Heiting Leo N.
Hoel Carlton H.
Sharp Melvin
Texas Instruments Incorporated
Wan Gene
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