Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1976-07-21
1978-04-25
Chatmon, Jr., Saxfield
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330 53, 333 11, H03F 360
Patent
active
040865436
ABSTRACT:
The basic module of a microwave Travelling-Wave Hybrid Junction amplifier (TWHJ) consists of a hybrid junction (0.degree., 180.degree. or 90.degree. hybrid) combined with an appropriate phase-shifting element (.pi./2 element is needed for 0.degree. and 180.degree. hybrids and no element is needed for a 90.degree. hybrid) and three negative conductance circuits terminating three ports of the modified hybrid while the fourth port serves as an input-output port. Because of proper stabilization and matching, the negative conductance circuits are not oscillating but are acting as reflection type amplifiers. Any RF energy applied to the input port of the hybrid is multiply reflected while travelling through the hybrid giving rise to amplified RF energy emerging from the input port of the hybrid junction. Under ideal conditions, the power amplification of the TWHJ amplifier is the product of the power amplifications of individual negative conductance circuits and the saturated output power of the amplifier is equal to the saturated output powers of the circuits adjacent to the output port. The TWHJ amplifier can be extended in a modular fashion to any number of negative conductance elements to achieve the desired power amplification and saturated output power.
REFERENCES:
patent: 3451005 (1969-06-01), Skullestad
patent: 3628167 (1971-12-01), Hines
patent: 3646467 (1972-02-01), Smith
patent: 3755753 (1973-08-01), Smith
patent: 3784925 (1974-01-01), Chang et al.
patent: 3952262 (1976-04-01), Jamison
patent: 4025872 (1977-05-01), Grayzel
Canadian Patents & Development Limited
Chatmon, Jr. Saxfield
Hughes James R.
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