Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Reexamination Certificate
2007-09-18
2007-09-18
Lee, Benny T. (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
C330S295000
Reexamination Certificate
active
11119349
ABSTRACT:
A traveling wave amplifier comprises a first normally off MOS transistor having a drain, source and gate terminal. The drain terminal is connected to a node of a drain line, which is connected to a first supply voltage potential via a connecting resistor. The gate terminal is connected to a node of a gate line, onto which an input signal is coupled. The source terminal is coupled to a second supply voltage potential via a first resistor. The traveling wave amplifier also comprises at least one second normally off MOS transistor. In addition, the traveling wave amplifier further comprises a normally off bias MOS transistor. The normally off bias MOS transistor forms a current mirror with at least one of the second normally off MOS transistors. An output signal of the traveling wave amplifier is tapped off on the drain line.
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Ahn et al., “A 0.5-8.5-GHz Fully Differential CMOS Distributed Amplifier”, IEEE Journal of Solid-State Circuits, vol. 37, No. 8, Aug. 2002, pp. 985-993, (9 pages).
Friedrich Martin
Grewing Christian
Li Puma Giuseppe
Sandner Christoph
Van Waasen Stefan
Flanagan Krista
Infineon - Technologies AG
Lee Benny T.
Maginot Moore & Beck
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