Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-03-01
2011-03-01
Elms, Richard (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185050, C365S185240
Reexamination Certificate
active
07898852
ABSTRACT:
Methods and apparatus for programming and sensing a bi-nitride layer trapped-charge memory device in one of a first and second programmed states or one of a first and second erased states, where the first and second programmed states correspond to first and second uniform trapped charge distributions of a first charge type and the first and second erased states correspond to first and second uniform trapped charge distributions of a second charge type.
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Levy Sagy
Ramkumar Krishnaswamy
Voss Peter
Cypress Semiconductor Corporation
Elms Richard
Nguyen Hien N
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