Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-04-24
2007-04-24
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185010, C326S104000
Reexamination Certificate
active
10771023
ABSTRACT:
A Trap Read Only Memory (TROM) architecture employs a NAND-type array structure configured as a read-only memory that is programmed only one time. The memory cells in the array comprise a gate terminal, a first channel terminal (source/drain), a second channel terminal (drain/source) and a channel region between the first and second channel terminals. A charge trapping structure, such as a layer of silicon nitride, is formed over the channel region. A tunneling dielectric is placed between the channel region and the charge trapping structure, and a blocking dielectric is placed between the charge trapping structure and the gate terminal. An E-field assisted (Fowler-Nordheim FN) tunneling program algorithm is applied.
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Haynes Mark
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Phung Anh
Wendler Eric J.
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