Trap doped laser combined with photodetector

Details Trap doped laser combined with photodetector Trap doped laser combined with photodetector

1979-07-18

1981-11-10

Davie, James W.

Oscillators

Molecular or particle resonant type

357 16, 357 17, 357 19, 357 91, H01S 319

Patent

active

043001076

ABSTRACT:
A semiconductor laser is disclosed wherein the active region has been doped with deep-level electron traps either by proton bombarding the active region or by doping with an impurity, such as oxygen, iron, or chromium. The density of traps is such that an optical absorption parameter of greater than 30 cm.sup.-1 is achieved. This laser, when combined with an ordinary photodiode, exhibits overall optical gain thereby permitting an array of optical logic circuits.

REFERENCES:
patent: 3654497 (1972-04-01), Dyment et al.
patent: 3758875 (1973-09-01), Hayashi
patent: 3891993 (1975-06-01), Beneking
patent: 3893044 (1975-07-01), Dunke et al.
patent: 4055815 (1977-10-01), Smith
patent: 4065729 (1977-12-01), Gover
Kato, "Microscale degradation in (GaAl)As Double-Heterostructure Diode Lasers", APL, vol. 31, No. 9, Nov. 1, 1977, pp. 588-590.
Paoli, "Saturation Absorption Effects in the Self-Pulsing (AlGa)As Junction Laser", APL, 34 (10), May 15, 1979, pp. 652-655.

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