Coherent light generators – Particular active media – Semiconductor
Patent
1986-08-21
1989-01-17
Sikes, William L.
Coherent light generators
Particular active media
Semiconductor
372 45, 357 16, 357 17, H01S 319
Patent
active
047992280
ABSTRACT:
A semiconductor laser diode includes two semiconductive cladding layers of different conductivity types, which are stacked on a substrate. An active layer of an undoped semiconductor film is sandwiched between the cladding layers. A channel groove is formed in a current blocking layer and the underlying cladding layer, to be deep enough to cause the current blocking layer to be divided into two parts. A waveguide layer covers the channel groove and the current-blocking layer, to provide a slab-coupled waveguide structure for transverse mode oscillation. The second cladding layer, the current-blocking layer, and the waveguide layer are composed of gallium arsenide containing aluminum.
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Hatakoshi Gen-ichi
Iizuka Yoshio
Kawata Hatsumi
Kinoshita Hideaki
Matsuura Nobuyuki
Epps Georgia Y.
Kabushiki Kaisha Toshiba
Sikes William L.
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