Transverse-mode stabilized semiconductor laser diode with slab-c

Coherent light generators – Particular active media – Semiconductor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

372 45, 357 16, 357 17, H01S 319

Patent

active

047992280

ABSTRACT:
A semiconductor laser diode includes two semiconductive cladding layers of different conductivity types, which are stacked on a substrate. An active layer of an undoped semiconductor film is sandwiched between the cladding layers. A channel groove is formed in a current blocking layer and the underlying cladding layer, to be deep enough to cause the current blocking layer to be divided into two parts. A waveguide layer covers the channel groove and the current-blocking layer, to provide a slab-coupled waveguide structure for transverse mode oscillation. The second cladding layer, the current-blocking layer, and the waveguide layer are composed of gallium arsenide containing aluminum.

REFERENCES:
patent: 4329660 (1982-05-01), Yano et al.
patent: 4635268 (1897-01-01), Motegi et al.
M. Okajima et al., Japanese Journal of Applied Physics, Supplement Extended Abstracts of the 16th Conference on Solid State Devices, Aug. 30 and Sept. 1, 1984, pp. 153-156 "A New Transverse-Mode Stabilized GaAlAs etc.".
Patent Abstracts of Japan, vol. 1, No. 52, May 20, 1977, JP-A-51 147 985.
Patent Abstracts of Japan, vol. 9, No. 204, Aug. 21, 1985, JP-A-60 66 894.
H. Kressel et al., "Large-Optical-Cavity (AlGa) As-GaAs Heterojunction Laser Diode: Threshold and Efficiency" J. Appl. Phys. vol. 43, No. 2, Feb. 1972, pp. 561-567.
Coleman et al., "Single-Longitudinal-Mode Metalorganic Chemical-Vapor-Deposition Self-Aligned GaAlAs-GaAs Double-Heterostructure Lasers", Appl. Phys. Lett., 37(3) Aug. 1, 1980, pp. 262-263.
Chinn et al., "TE Modes of Graded-Index Large-Optical-Cavity Waveguides", Optics Communications, vol. 40, No. 3, Jan. 1, 1982, pp. 179-184.
Turley, "Optical Waveguiding in (In, Ga) (As, P) Inverted Rib Waveguide Lasers at 1.3 .mu.m Wavelength", IEEE Journal of Quantum Electronics, vol. QE-19, No. 7, Jul. 1983, pp. 1186-1195.
Technical Digest of the International Electron Devices, Wash. D.C., US 5th-7th Dec. 1983, pp. 292-295, IEEE, New York, M. Okajima et al., "Transverse-Mode Stabilized GaAlAs Laser with Embedded Confining Layer etc.", p. 292.
Patents Abstracts of Japan, vol. 6, No. 123, (E-117) [1001], 8th Jul. 1982; JP-A-57 49 289 (Mitsubishi Denki K.K.).
Patents Abstract of Japan, vol. 6, No. 144, (E-122) [1022], 3rd Aug. 1982; JP-A-57 66 685 (Nippon Denki K.K.) 22-04-1982.
Abstracts of the 32th Domestic Meetings on Applied Physics in Japan, (1985) 131, H. Nagasaka et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Transverse-mode stabilized semiconductor laser diode with slab-c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transverse-mode stabilized semiconductor laser diode with slab-c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transverse-mode stabilized semiconductor laser diode with slab-c will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2416335

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.