Transverse-mode stabilized laser diode

Details Transverse-mode stabilized laser diode Transverse-mode stabilized laser diode

1991-01-31

1991-11-12

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, 357 17, H01S 319

Patent

active

050654020

ABSTRACT:
A transverse mode stabilized AlGaInP visible light laser diode in accordance with the present invention has a characteristic in that, instead of forming a built-in refractive index distribution in an active layer along a junction plane by means of the absorption loss of the oscillated light in the conventional transverse mode stabilized AlGaInP laser diodes, an optical guide layer having a ridge stripe portion is formed on the active layer, and a refractive index distribution is formed by the thickness difference of the optical guide layer. In particular, the present laser diode employs as the current blocking layer to be formed on the sides of the mesa, an Al.sub.x Ga.sub.1-x As layer which does not give rise to an absorption loss of the oscillated light.

REFERENCES:
patent: 4893313 (1990-01-01), Hatakoshi et al.
patent: 4982409 (1991-01-01), Kinoshita et al.
"High Power Operation of InGaP/InAlP Transverse Mode Stabilized Laser Diodes", Abstract of Papers for the 1987 Fall Meeting of Japan Society for Applied Physics, p. 764, 19a-ZR-5.

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