Transverse-mode oscillation semiconductor laser device

Details Transverse-mode oscillation semiconductor laser device Transverse-mode oscillation semiconductor laser device

1990-07-12

1991-11-12

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

050654047

ABSTRACT:
A visible-light wavelength continuous oscillation laser is disclosed which has an N type GaAs substrate, an N type GaAlAs cladding layer formed on the substrate, and a non-doped GaAlAs active layer formed on the cladding layer. The laser further includes two N type GaAlAs layers, a P type GaAlAs optical guide layer, a P type cladding layer consisting of upper and lower portions, and a ridge section. The N type GaAlAs layers contact both sides of the ridge section. The optical guide layer is sandwiched between the upper and lower portions of the P type cladding layer, is located within the ridge section, and has a refractive index greater than that of the P type cladding layer. The distance between the active layer and the optical guide layer does not depend on the condition in which etching is performed to form the ridge section, but depends basically on the time required to grow crystal.

REFERENCES:
patent: 4480331 (1984-10-01), Thompson
patent: 4635268 (1987-01-01), Motegi et al.
patent: 4961197 (1990-10-01), Tanaka et al.

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