Transverse mode control in double-heterostructure lasers utilizi

Oscillators – Molecular or particle resonant type

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357 18, H01S 319

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040770192

ABSTRACT:
A heterojunction diode laser which achieves transverse mode control by providing adjacent to the active region layer of the laser a layer having a thickness substantially less than the thickness of the active region layer and of a material having a bandgap higher than the bandgap of the material of the active region layer. All transverse modes have increased penetration into a lossy substrate via the thin layer with the loss being least for the lowest order mode such that only the lowest order mode can be made to lase at low pumping current levels.

REFERENCES:
patent: 3733561 (1973-05-01), Hayashi
patent: 3740661 (1973-06-01), D'Asaro
patent: 3838359 (1974-09-01), Hakki et al.
Lockwood et al., IEEE J. of Quantum Electronics, vol. QB-10, No. 7, July 1976, pp. 567-569.

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