Transverse junction stripe semiconductor laser device

Details Transverse junction stripe semiconductor laser device Transverse junction stripe semiconductor laser device

1980-05-13

1982-06-08

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

043343112

ABSTRACT:
A p type GaAlAs layer is disposed on an n type substrate and then n type GaAlAs, GaAs and GaAlAs layers are successively grown on the p type GaAlAs layer. Zn is diffused into predetermined portions of those n type layers to a depth reaching the GaAlAs layer to form pn junctions between the original n type regions of the layers and their regions converted to the p form the n type conductivity. The pn junction formed in the GaAs layer serves as a light emitting region.

REFERENCES:
patent: 4183038 (1980-01-01), Namizaki et al.
Kumabe et al., "High Temperature Single Mode CW Operation with a TJS Laser Using a Semi-Insulating GaAs Substrate", Proceedings of the 10th Conference on Solid _State Devices, Tokyo, 1978, Japanese Journal of Applied Physics, vol. 18 (1979) Supplement 18-1, pp. 371-375.

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