Transverse junction stripe laser with steps at the end faces

Details Transverse junction stripe laser with steps at the end faces Transverse junction stripe laser with steps at the end faces

1982-08-25

1986-05-27

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 47, H01S 319

Patent

active

045920613

ABSTRACT:
A semiconductor laser is provided with an active layer which is bent at an angle at both ends of the resonator so that both ends of the waveguide path are formed by semiconductor cladding layers. The structure is effective in increasing the obtainable optical density while decreasing absorption at the waveguide ends.

REFERENCES:
patent: 4183038 (1980-01-01), Namizaki et al.
patent: 4334311 (1982-06-01), Oomura et al.
H. Yonezu et al., "High Optical Power Density Emission from a Window-Stripe AlGaAs Double-Heterostructure Laser", Appl. Phys. Letters, 34(10), 15 May 1979, pp. 637-639.

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