Transverse junction stripe laser

Details Transverse junction stripe laser Transverse junction stripe laser

1987-09-23

1989-02-14

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, 372 50, 372 97, H01S 319

Patent

active

048051799

ABSTRACT:
A GaAs/AlGaAs-transverse junction stripe (TJS) laser with p-n junction formation by crystal plane dependent doping is described. The laser structure includes a molecular beam epitaxy (MBE)-deposited hetero-structure comprising AlGaAs layers with an active GaAs layer sandwiched therebetween. These layers are grown on the patterned surface of a GaAs substrate which provides (100)-plane oriented planar ridges and grooves, the edges being (111A)-plane oriented. p-n homojunctions are formed in the GaAs layer at the intersections of the (111A) and (100) crystal planes. Ohmic contacts are provided for applying currents of at least the threshold level of the junctions. These TJS lasers can be used to form 1- or 2-dimensional arrays of phase-coupled lasers for providing high optical power output.

REFERENCES:
patent: 4334311 (1982-06-01), Oomura et al.
patent: 4592061 (1986-05-01), Kumabe et al.
Applied Physics Letters, vol. 47, No. 12, Dec. 1985, pp. 1309-1311, American Institute of Physics, Woodbury, NY, US D. L. Miller: "Lateral P-N Junction Formation in GaAs Molecular Beam Epitaxy by Crystal Plane Dependent Doping".

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