Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Patent
1994-11-01
1996-04-16
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
257523, 257525, 257511, 257556, 257557, 257588, 257592, H01L 2972, H01L 29161, H01L 2970
Patent
active
055085539
ABSTRACT:
A transversal bipolar transistor is structured to have a single crystal semiconductor film provided on a single crystal semiconductor region which is provided on a semiconductor substrate. The semiconductor substrate is of a first conductivity type, and the single crystal semiconductor region is of a second conductivity type which is opposite to the first conductivity type. The single crystal semiconductor film is divided in the transversal direction into a central portion of the second conductivity type for a base region and left and right portions of the first conductivity type for emitter and collector regions. The transversal bipolar transistor may be integrated with a vertical bipolar transistor commonly on the semiconductor substrate.
REFERENCES:
patent: 4583106 (1986-04-01), Anantha et al.
patent: 5065209 (1991-11-01), Spratt et al.
patent: 5073810 (1991-12-01), Owada et al.
patent: 5117271 (1992-05-01), Comfort et al.
patent: 5198375 (1993-03-01), Hayden et al.
patent: 5315151 (1994-05-01), Hsieh et al.
patent: 5321301 (1994-06-01), Sato et al.
patent: 5323032 (1994-06-01), Sato et al.
Patent Abstract of Japan, vol. 15, No. 394 (E-1119), Oct. 7, 1991 & JP-A-03 159 130 (Fujitsu Ltd.) Jul. 9, 1991.
Sato, Fumihiko et al., 1992 Symposium on VLSI Technology Digest of Technical Papers, "A Novel Selective SiGe Epitaxial Growth Technology for Self-aligned HBTs," 1992, pp. 62-63.
Sato, F. et al., 1990 IEEE, "A `Self-Aligned` Selective MBE Technology for High Performance Bipolar Transistors," 1990, pp. 607-610.
Nakamura Satoshi
Tashiro Tsutomu
Hille Rolf
NEC Corporation
Williams Alexander Oscar
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