Transversal bipolar transistor integrated with another transisto

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure

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257523, 257525, 257511, 257556, 257557, 257588, 257592, H01L 2972, H01L 29161, H01L 2970

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active

055085539

ABSTRACT:
A transversal bipolar transistor is structured to have a single crystal semiconductor film provided on a single crystal semiconductor region which is provided on a semiconductor substrate. The semiconductor substrate is of a first conductivity type, and the single crystal semiconductor region is of a second conductivity type which is opposite to the first conductivity type. The single crystal semiconductor film is divided in the transversal direction into a central portion of the second conductivity type for a base region and left and right portions of the first conductivity type for emitter and collector regions. The transversal bipolar transistor may be integrated with a vertical bipolar transistor commonly on the semiconductor substrate.

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Sato, Fumihiko et al., 1992 Symposium on VLSI Technology Digest of Technical Papers, "A Novel Selective SiGe Epitaxial Growth Technology for Self-aligned HBTs," 1992, pp. 62-63.
Sato, F. et al., 1990 IEEE, "A `Self-Aligned` Selective MBE Technology for High Performance Bipolar Transistors," 1990, pp. 607-610.

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