Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-01-18
2011-01-18
Maldonado, Julio J (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C438S022000, C438S149000, C257S072000, C257SE51005, C257SE51006
Reexamination Certificate
active
07872261
ABSTRACT:
An embodiment of the present invention is an transparent thin film transistor which has an substantially transparent substrate, a gate line made of a thin film of a substantially transparent conductive material, a substantially transparent gate insulating film, a substantially transparent semiconductor active layer, a source line made of a thin film of a metal material and a drain electrode made of a thin film of a substantially transparent conductive material. In addition, the source line and the drain electrode are formed apart from each other and sandwich the substantially transparent semiconductor active layer. Moreover, at least any one of the thin film of the gate line and the thin film of the source line is stacked with a thin film of a metal material.
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Nomura, et al., “Room-temperature fabrication of transparent flexible thin-film transistors using -morphous oxide semiconductors”,Nature, Nov. 25, 2004, pp. 488-492.
Maldonado Julio J
Scarlett Shaka
Squire Sanders & Dempsey L.L.P.
Toppan Printing Co. Ltd.
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