Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2004-11-30
2010-11-30
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S043000, C257S448000, C257SE31126, C257SE23015, C349S143000, C977S781000, C977S784000
Reexamination Certificate
active
07843061
ABSTRACT:
The electrodes (7) and the contact zones (15) are structured in a film of a transparent conductive oxide (TCO), deposited on a transparent support (1) possibly coated with an intermediate film (3), while being separated by dielectric spaces (9) formed by nano fissures (11) obtained by UV radiation and passing through the TCO film. A protective film (13) can coat the electrodes (7) and the dielectric spaces (9).
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European Search Report, completed Apr. 22, 2004.
Baroni Pierre-Yves
Grupp Joachim
Poli Gian-Carlo
Asulab S.A.
Chen Yu
Griffin & Szipl, P.C.
Wilson Allan R.
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