Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1998-04-24
2000-01-18
Fahmy, Wael
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438 24, 438 46, 438 47, 257 84, 257 85, 257 94, 257 96, H01L 2100
Patent
active
060157194
ABSTRACT:
Methods for the fabrication of TS LED chips with improved light extraction and optics, particularly increased top surface emission, and the TS LEDs so fabricated are described. Non-absorbing DBRs within the chip permit the fabrication of the LEDs. The transparent DBRs redirect light away from absorbing regions such as contacts within the chip, increasing the light extraction efficiency of the LED. The non-absorbing DBRs can also redirect light toward the top surface of the chip, improving the amount of top surface emission and the on-axis intensity of the packaged LED. These benefits are accomplished with optically non-absorbing layers, maintaining the advantages of a TS LED, which advantages include .about.6 light escape cones, and improved multiple pass light extraction.
REFERENCES:
patent: 5376580 (1994-12-01), Kish et al.
patent: 5502316 (1996-03-01), Kish et al.
patent: 5793062 (1998-08-01), Kish, Jr. et al.
Kish, Jr. Fred A.
Stockman Stephen A.
Fahmy Wael
Hewlett--Packard Company
Pham Long
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