Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Patent
1997-10-24
1998-08-11
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
372 99, H01L 3300, H01S 308
Patent
active
057930627
ABSTRACT:
Methods for the fabrication of TS LED chips with improved light extraction and optics, particularly increased top surface emission, and the TS LEDs so fabricated are described. Non-absorbing DBRs within the chip permit the fabrication of the LEDs. The transparent DBRs redirect light away from absorbing regions such as contacts within the chip, increasing the light extraction efficiency of the LED. The non-absorbing DBRs can also redirect light toward the top surface of the chip, improving the amount of top surface emission and the on-axis intensity of the packaged LED. These benefits are accomplished with optically non-absorbing layers, maintaining the advantages of a TS LED, which advantages include .about.6 light escape cones, and improved multiple pass light extraction.
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Kish, Jr. Fred A.
Stockman Stephen A.
Hewlett--Packard Company
Jackson Jerome
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