Transparent phase shift mask for fabrication of small...

Details Transparent phase shift mask for fabrication of small... Transparent phase shift mask for fabrication of small...

2005-08-23

2005-08-23

Letscher, Geraldine (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S322000, C430S323000, C430S324000, C430S394000

Reexamination Certificate

active

06933085

ABSTRACT:
In one exemplary embodiment, a resolution enhancement phase shift mask comprises a transparent substrate having a first clear region, a second clear region and a third clear region. An opaque film, such as chrome, is situated over at least a portion of the transparent substrate to define an opaque region. The transparent substrate can be formed of quartz or calcium fluoride, for example. The second and third clear regions have equal thicknesses. However, the first clear region has a thickness different from each of the second and third clear regions. The difference in thickness between the first clear region and the second and third clear regions is calculated to cause a 180 degree phase shift in light passing through the first clear region relative to a phase of light passing through each of the second and third clear regions. The destructive interference caused at the phase boundaries of the first clear region and the second and third clear regions results in a dark unexposed area on the surface of an underlying photoresist layer; the dark unexposed area having geometry and dimensions corresponding to the geometry and dimensions of the first clear region.

REFERENCES:
patent: 6479194 (2002-11-01), Talor, Jr.
patent: 6531250 (2003-03-01), Kim
patent: 6716558 (2004-04-01), Talor, Jr.

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