Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-03-22
2011-03-22
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE29070
Reexamination Certificate
active
07910932
ABSTRACT:
Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.
REFERENCES:
patent: 5156918 (1992-10-01), Marks et al.
patent: 6459685 (2002-10-01), Mahe
patent: 6855274 (2005-02-01), Marks et al.
patent: 6863943 (2005-03-01), Wang et al.
patent: 7151281 (2006-12-01), Shei et al.
patent: 7233041 (2007-06-01), Duan et al.
patent: 7405129 (2008-07-01), Afzali-Ardakani et al.
patent: 2002/0090738 (2002-07-01), Cozzette et al.
patent: 2004/0031975 (2004-02-01), Kern et al.
patent: 2004/0105810 (2004-06-01), Ren et al.
patent: 2006/0003485 (2006-01-01), Hoffman et al.
patent: 2006/0169788 (2006-08-01), Empedocles et al.
patent: WO2008089401 (2008-07-01), None
Ju et al. “Fabrication of fully transparent nanowire transistors for transparent and flexible electronics,” Nature Nanotechnology, vol. 2, pp. 378-384, Jun. 2007, entire document.
Xu et al. “Fabrication and photoluminescence of Zinc silicate/silica modulated ZnO nanowires,” Nanotechnology, vol. 16, No. 12, pp. 2808-2812, Dec. 2005, entire document.
Li, C., Zhang, D., Han, S., Liu, X., Tang, T., Zhou, C. “Diameter-Controlled Growth of Single-Crystalline In2O3 Nanowires and Their Electronic Properties.” Adv. Mater. 2003, 15, No. 2, Jan. 16, pp. 143-146.
Hoffman, R.L., Norris, B.J., Wager, J.F. “ZnO-Based Transparent Thin-Film Transistors.” Applied Physics Letters, vol. 82, No. 5, Feb. 3, 2003, pp. 733-735.
Zhang, D., Li, C., Han, S., Liu, X., Tang, T., Jin, W., Zhou, C. “Electronic Transport Studies of Single-Crystalline In203 Nanowires.” Applied Physics Letters, V. 82, No. 1, Jan. 6, 2003, pp. 112-114.
Carcia, P.F., McLean, R.S., Reilly, M.H., Nunes Jr., G. “Transparent ZnO Thin-Film Transistor Fabricated by rf Magnetron Sputtering.” Applied Physics Letters, V. 82, No. 7, Feb. 17, 2003, pp. 1117-1119.
Wang, D., Wang, Q., Javey, A., Tu, R., Dai, H., Kim, H., McIntyre, P.C., Krishnamohan, T., Saraswat, K.C. “Germanium Nanowire Field-Effect Transistors with SiO2 and High-κ HfO2 Gate Dielectrics.” Applied Physics Letters, V. 83, No. 12, Sep. 22, 2003, pp. 2432-2434.
Liu, F., Bao, M., Wang, K.L., Li, C., Lei, B., Zhou, C. “One-Dimensional Transport of In2O3 Nanowires.” Applied Physics Letters 86, 213101 (2005), pp. 213101-1 21310-3.
Hur, S.-H., Park, O.O., Rogers, J.A. “Extreme Bendability of Single-Walled Carbon Nanotube Networks Transferred from High-Temperature Growth Substrates to Plastic and Their Use in Thin-Film Transistors.” Applied Physics Letters 86, 243502 (2005).
Takenobu, T., Takahashi, T., Kanbara, T., Tsukagoshi, K., Aoyagi, Y., Iwasa, Y. “High-Performance Transparent Flexible Transistors Using Carbon Nanotube Films.” Applied Physics Letters 88, 033511 (2006).
Chang, P.-C., Fan, Z., Chien, C.-J., Stichtenoth, D., Ronning, C., Lu, J. G. “High-Performance ZnO Nanowire Field Effect Transistors.” Applied Physics Letters 89, 133113 (2006).
Ju, S., Janes, D.B., Lu, G., Facchetti,A., Marks, T.J. “Effects of Bias Stress on ZnO Nanowire Field-Effect Transistors Fabricated with Organic Gate Nanodielectrics.” Applied Physics Letters 89, 263102 (2006).
Cha, S.N., Jang, J.E., Choi, Y., Amaratunga, A.J., Ho, G.W., Welland, M.E., Hasko, D.G., Kang, D.-J., Kim, J.M. “High Performance ZnO Nanowire Field Effect Transistor Using Self-Assigned Nanogap Gate Electrodes.” Applied Physics Letters 89, 263102 (2006).
Lang, O, Pettenkofer, C., Sanchez-Royo, J.F., Segura, A., Klein, A., Jaegermann, W. “Thin Film Growth and Band Lineup of In2O3 on the Layered Semiconductor InSe.” J. of Applied Physics, V. 86, No. 10, Nov. 15, 1999, pp. 5687-5691.
Kim, S.Y., Lee, J.-L., Kim, K-B, Tak, Y.-H. “Effect of Ultraviolet-Ozone Treatment of Indium-Tin-Oxide on Electrical Properties of Organic Light Emitting Diodes.” J. of Applied Physics, V. 96. No. 5, Mar. 1, 2004, pp. 2560-2563
Vashaee, D., Shakouri, A., Goldberger, J., Kuykendall, T., Pauzauskie, P., Yang, P. “Electrostatics of Nanowire Transistors with Triangular Cross Sections.” J. of Applied Physics, 99, 054310 (2006).
Presley, R.E., Munsee, C.L., Park, C.-H., Hong, D; Wager, J.F., Keszler, D.A. “Tin Oxide Transparent Thin-Film Transistors.” J. Physics D: Applied Physics, 37 (2004) 2810-2813.
Ju, Sanghyun, Lee, K., Janes, D.B., Yoon, M-H., Facchetti, A., Marks. T.J. “Low Operating Voltage Single ZnO Nanowire Field-Effect Transistors Enabled by Self-Assembled Organic Gate Nanodielectrics.” Nano Letters (2005) V. 5, No. 11, 2281-2286.
Banerjee, D., Lao, J.Y., Wang, D.Z., Huang, J.Y., Steeves, D., Kimball, B., Ren, Z.F. “Synthesis and Photoluminescence Studies on ZnO Nanowires.” Nanotechnology, 15 (2004) 404-409.
Moon, T.-H., Jeong, M.-C., Oh, B.-Y., Ham, M.-H., Jeun, M.-H., Lee, W.-Y., Myoung, J.-M. “Chemical Surface Passivation of HfO2 Films in a ZnO Nanowire Transistor.” Nanotechnology 17 (2006) 2116-2121.
Wang, L., Yoon, M.-H., Lu, G., Yang, Y., Facchetti, A., Marks, T.J. “High Performance Transparent Inorganic-Organic Hybrid Thin-Film N-Type Transistors.” Nature Materials, V. 5, Nov. 2006, pp. 293-317.
Gassenbauer, Y., Schafranek, R., Klein, A., Zafeiratos, S., Hävecker, M., Knop-Gericke, A., Schlögl, R. “Surface States, Surface Potentials, and Segregation at Surfaces of Tin-Doped In2O3.” Physical Review B. 73. 245312 (2006).
Yoon, M.-H., Facchetti, A., Marks, T.J. “σ-π Molecular Dielectric Multilayers for Low-Voltage Organic Thin-Film Transistors.” PNAS, V. 102, No. 13, 4678-4682, Mar. 29, 2005.
Nomura, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M., Hosono, H. “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor.” Science, 00368075, V. 300, Issue 5623, May 23, 2003.
Fortunato, E., Barquinha, P., Pimentel, A., Gonçalves, A., Marques, A., Pereira, L., Martins, R. “Recent Advances in ZnO Transparent Thin Film Transistors.” Thin Solid Films 487 (2005) 205-211.
Facchetti Antonio
Janes David B.
Ju Sanghyun
Marks Tobin J.
Ye Peide
Northwestern University
Prenty Mark
Purdue Research Foundation
Reinhart Boerner Van Deuren s.c.
University of Southern California
LandOfFree
Transparent nanowire transistors and methods for fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transparent nanowire transistors and methods for fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transparent nanowire transistors and methods for fabricating... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2646596