Transparent metal shielded isolation for image sensors

Details Transparent metal shielded isolation for image sensors Transparent metal shielded isolation for image sensors

2006-09-20

2010-02-16

Quach, Tuan N. (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S424000, C438S430000, C257SE21546

Reexamination Certificate

active

07662657

ABSTRACT:
An isolation region formed in a substrate and lined with a transparent metal layer. The isolation region provides isolation between adjacent active areas of an integrated circuit structure, for example the inventive region may provide isolation between pixels of a pixel array. Utilizing a transparent material maintains high quantum efficiency of the pixels as photons are not blocked from penetrating into the substrate. In one exemplary embodiment, a shallow trench isolation region is formed in a substrate, lined with an oxide or other dielectric, and an indium-tin-oxide shielding layer is formed over the oxide. The lined trench may then be filled with either the transparent metal material or a transparent insulating material.

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