Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2005-05-10
2005-05-10
Crane, Sara (Department: 2811)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S492000, C438S497000
Reexamination Certificate
active
06890781
ABSTRACT:
A transparent layer of a LED device and the method for growing the same are disclosed in this present invention. This present invention provides an improved liquid phase epitaxy (LPE) process for growing a transparent layer of a LED device. In the above-mentioned LPE process, an improved supersaturated solution is utilized to overcome the shortcomings in the prior art, wherein the supersaturated solution comprises antimony and/or indium as a solvent. Furthermore, a metallic zinc and/or magnesium dopant is added into the supersaturated solution to optimize the characters of the transparent layer. Therefore, this invention can provide a more efficient method for growing a transparent layer of a LED device, and the quality of the above-mentioned transparent layer can thereby be improved.
REFERENCES:
patent: 5254211 (1993-10-01), Yonehara
Chang Li-Yuan
Chang Liann-Be
Hsieh Li-Zen
Kuo Li-Hsin
Crane Sara
Rosenberg , Klein & Lee
Uni Light Technology Inc.
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