Transparent GaAs photoelectric layer

Details Transparent GaAs photoelectric layer Transparent GaAs photoelectric layer

1985-04-30

1986-08-12

McCamish, Marion C.

Stock material or miscellaneous articles

Composite

Of inorganic material

428697, 428699, 428700, 156600, B32B 900

Patent

active

046056009

ABSTRACT:
Disclosed is a new type of transparent GaAs photo electric layer formed on an optical window made of a GaP single crystal substrate via an Al.sub.x Ga.sub.(1-x) As buffer layer, in which a gradual-lattice-constant layer of quadruple Al.sub.x Ga.sub.(1-x) PyAs.sub.(1-y) compound crystal is formed between the GaP single crystal substrate and the Al.sub.x Ga.sub.(1-x) As buffer layer. The y content in the gradual-lattice-constant layer of quadruple Al.sub.x Ga.sub.(1-x) PyAs.sub.(1-y) compound crystal changes from 1 to 0 as deposition of the gradual-lattice-constant layer of quadruple Al.sub.x Ga.sub.(1-x) PyAs.sub.(1-y) compound crystal goes on while the x content can arbitrarily be selected in the range of 0 to 1.

REFERENCES:
patent: 3862859 (1975-01-01), Ettenberg et al.
patent: 4404265 (1983-09-01), Manasevit
"An Improved GaAs Transmission Photocathode," Allenson et al., J. Phys. D.: Appln. Phy., vol. 5, 1972.

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