Transparent electrode film and group III nitride...

Details Transparent electrode film and group III nitride... Transparent electrode film and group III nitride...

2005-03-15

2005-03-15

Wille, Douglas (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S047000

Reexamination Certificate

active

06867058

ABSTRACT:
A transparent electrode film containing gold for covering the uppermost layer of a group III nitride semiconductor device has a first layer formed on the uppermost layer and not thicker than 15 Å, and a second layer formed on the first layer and containing gold. The first layer contains a first metal having an ionization potential lower than that of gold, and the second layer further contains a second metal having an ionization potential lower than that of gold.

REFERENCES:
patent: 6281526 (2001-08-01), Nitta et al.
patent: 6326223 (2001-12-01), Miki et al.
patent: 9-320984 (1997-12-01), None
patent: 10-209493 (1998-08-01), None
patent: 410229219 (1998-08-01), None

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