Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2003-12-30
2008-08-26
Mondt, Johannes P (Department: 3663)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S100000, C257S102000, C257S103000
Reexamination Certificate
active
07417263
ABSTRACT:
In order to emit a light from an electrode side, in semiconductor light emitting devices such as LED and the like, and liquid crystal, the electrode is formed of a transparent material so as to transmit a light through the transparent electrode and exit the light. A ZnO, which constitutes a material for the transparent electrode, is subject to erosion by acid and alkali, thus, as the case may cause loss of a reliability of the electrode under the influence of ion-containing moisture. In order to solve such a problem, this invention has as its aim a transparent electrode film provided with stability capable of preventing any degradation under the influence of any ion-containing moisture, while being kept acid-proof and alkali-proof. In order to accomplish the above-mentioned aim, this invention provides a transparent electrode made up of a ZnO as its main material, wherein its surface is covered with a Mg-doped ZnO film.
REFERENCES:
patent: 4888202 (1989-12-01), Murakami et al.
patent: 5625202 (1997-04-01), Chai
patent: 5804834 (1998-09-01), Shimoyama et al.
patent: 6057561 (2000-05-01), Kawasaki et al.
patent: 6084899 (2000-07-01), Shakuda
patent: 6320207 (2001-11-01), Furukawa et al.
patent: 6416888 (2002-07-01), Kawamura et al.
patent: 6423983 (2002-07-01), Narayan et al.
patent: 6541797 (2003-04-01), Udagawa
patent: 6674098 (2004-01-01), Niki et al.
patent: 6787435 (2004-09-01), Gibb et al.
patent: 6806503 (2004-10-01), Hosono et al.
patent: 2001/0028062 (2001-10-01), Uemura et al.
patent: 2002/0030196 (2002-03-01), Iwata et al.
patent: 2002/0105279 (2002-08-01), Kimura
patent: 2002/0126719 (2002-09-01), Kadota
patent: 2002/0127853 (2002-09-01), Hubacek et al.
patent: 2003/0209723 (2003-11-01), Sakai
patent: 2004/0051109 (2004-03-01), Ishizaki et al.
patent: 2004/0079947 (2004-04-01), Lan et al.
patent: 2004/0104392 (2004-06-01), Ishizaki
patent: 2004/0112278 (2004-06-01), Yoshida et al.
patent: 2004/0235212 (2004-11-01), Ishizaki
patent: 2005/0224825 (2005-10-01), Ishizaki
patent: 11-070610 (1999-03-01), None
patent: 2000-353820 (2000-12-01), None
patent: 2001-210867 (2001-08-01), None
patent: 2002-076356 (2002-03-01), None
patent: 2002-011059 (2002-04-01), None
patent: 2002-164570 (2002-06-01), None
patent: 2002-170993 (2002-06-01), None
patent: 2002-222991 (2002-08-01), None
patent: 2003037268 (2003-02-01), None
patent: WO 01/08229 (2002-08-01), None
patent: WO-02-070793 (2002-09-01), None
patent: WO-02/89223 (2002-11-01), None
Wada et al, “Thin Film Materials Technology—Sputtering of Compound Materials”, publisher: William Andrew Publishing / Noyes (2004), p. 306 (Table 5.28).
S. M. Sze, “Modern Semiconductor Device Physics”, John Wiley & Sons, Inc., New York ; p. 537 (Appendix F)(ISBN: 0-471-15237-4 (1998)).
Merriam-Webster's Collegiate Dictionary, tenth Edition, p. 811; Merriam-Webster, Incorporated, Springfield, MA (USA) (1999).
Japanese language office action and its English translation for corresponding Japanese application No. 2003-048065 list the reference above.
Hogan & Hartson LLP
Mondt Johannes P
Rohm & Co., Ltd.
LandOfFree
Transparent electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transparent electrode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transparent electrode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4015419