Transparent electrode

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

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C257SE33064

Reexamination Certificate

active

07948003

ABSTRACT:
In order to emit a light from an electrode side, in semiconductor light emitting devices such as LED and the like, and liquid crystal, the electrode is formed of a transparent material so as to transmit a light through the transparent electrode and exit the light. A ZnO, which constitutes a material for the transparent electrode, is subject to erosion by acid and alkali, thus, as the case may cause loss of a reliability of the electrode under the influence of ion-containing moisture. In order to solve such a problem, this invention has as its aim a transparent electrode film provided with stability capable of preventing any degradation under the influence of any ion-containing moisture, while being kept acid-proof and alkali-proof. In order to accomplish the above-mentioned aim, this invention provides a transparent electrode made up of a ZnO as its main material, wherein its surface is covered with a Mg-doped ZnO film.

REFERENCES:
patent: 4888202 (1989-12-01), Murakami et al.
patent: 5625202 (1997-04-01), Chai
patent: 5804834 (1998-09-01), Shimoyama et al.
patent: 6057561 (2000-05-01), Kawasaki et al.
patent: 6084899 (2000-07-01), Shakuda
patent: 6320207 (2001-11-01), Furukawa et al.
patent: 6416888 (2002-07-01), Kawamura et al.
patent: 6423983 (2002-07-01), Narayan et al.
patent: 6541797 (2003-04-01), Udagawa
patent: 6674098 (2004-01-01), Niki et al.
patent: 6706962 (2004-03-01), Nelles et al.
patent: 6710548 (2004-03-01), Kimura
patent: 6787435 (2004-09-01), Gibb et al.
patent: 6806503 (2004-10-01), Hosono et al.
patent: 7132691 (2006-11-01), Tanabe et al.
patent: 2001/0028062 (2001-10-01), Uemura et al.
patent: 2002/0014631 (2002-02-01), Iwata et al.
patent: 2002/0030196 (2002-03-01), Iwata et al.
patent: 2002/0105279 (2002-08-01), Kimura
patent: 2002/0124794 (2002-09-01), Sakai et al.
patent: 2002/0126719 (2002-09-01), Kadota
patent: 2002/0127853 (2002-09-01), Hubacek et al.
patent: 2003/0209723 (2003-11-01), Sakai
patent: 2004/0051109 (2004-03-01), Ishizaki et al.
patent: 2004/0079947 (2004-04-01), Lan et al.
patent: 2004/0104392 (2004-06-01), Ishizaki
patent: 2004/0112278 (2004-06-01), Yoshida et al.
patent: 2004/0235212 (2004-11-01), Ishizaki
patent: 2005/0224825 (2005-10-01), Ishizaki
patent: 11-070610 (1999-03-01), None
patent: 2000-150900 (2000-05-01), None
patent: 2000-353820 (2000-12-01), None
patent: 2001-210867 (2001-08-01), None
patent: 2002-076356 (2002-03-01), None
patent: 2002-111059 (2002-04-01), None
patent: 2002-164570 (2002-06-01), None
patent: 2002-170993 (2002-06-01), None
patent: 2002-222991 (2002-08-01), None
patent: 2003-037268 (2003-02-01), None
patent: 469511 (2001-12-01), None
patent: 01/08229 (2002-08-01), None
patent: 02/070793 (2002-09-01), None
patent: 02/089223 (2002-11-01), None
Vispute et al (Applied Physics Letters,vol. 73, No. 3, Jul. 20, 1998).
Taiwanese language office action and its English language translation for corresponding Taiwanese application 092135914 lists the references above.
Wada, et al., “Thin Film Materials Technology—Sputtering of Compound Materials”, publisher: William Andrew Publishing / Noyes (2004), p. 306 (Table 5.28).
S.M. Sze, “Modern Semiconductor Device Physics”, John Wiley & Sons, Inc., New York; p. 537 (Appendix F) (ISBN: 0-471-15237-4 (1998)).

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