Transparent, electrically-conductive, ion-blocking layer for ele

Details Transparent, electrically-conductive, ion-blocking layer for ele Transparent, electrically-conductive, ion-blocking layer for ele

1994-04-29

1996-07-02

Dzierzynski, Paul M.

Optical: systems and elements

Optical modulator

Light wave temporal modulation

G02F 1153

Patent

active

055328695

ABSTRACT:
Transparent, electrically-conductive, ion-blocking layers suitable for use in electrochromic windows. Preferably, one such layer is interposed between the electrochromic layer and its adjacent electron-conductive layer, and another such layer is interposed between the counter-electrode layer and its adjacent electron-conductive layer. Each of the transparent, electrically-conductive, ion-blocking layers comprises an n-type lithium-doped silicon carbide thin film formed by rf diode sputtering. In addition to being suitable for use in electrochromic windows, the n-type lithium-doped silicon carbide thin films of the present invention may also be used in a variety of electronic devices and may be combined, for example, with p-type silicon carbide films, either doped or undoped, in various p-n junction devices, such as LED's, high temperature diodes, etc.

REFERENCES:
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patent: 5206756 (1993-04-01), Cheshire
Goldner et al., "Nuclear reaction analysis profiling as direct evidence for lithium ion mass transport in thin film `rocking-chair` structures," Appl. Phys. Lett., vol. 62, No. 14, pp. 1699-1701 (Apr. 5, 1993).

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