Transparent double-injection field-effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge injection device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S213000, C257S224000, C257S249000, C257S250000, C257SE31126

Reexamination Certificate

active

06998656

ABSTRACT:
A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.

REFERENCES:
patent: 3544864 (1970-12-01), Richman
patent: 4458261 (1984-07-01), Omura
patent: 4766471 (1988-08-01), Ovshinsky et al.
patent: 4843446 (1989-06-01), Nishino et al.
patent: 4882295 (1989-11-01), Czubatyj et al.
patent: 4958898 (1990-09-01), Friedman et al.
patent: 5128731 (1992-07-01), Lien et al.
patent: 5132676 (1992-07-01), Kimura et al.
patent: 5235443 (1993-08-01), Barnik et al.
patent: 5295009 (1994-03-01), Barnik et al.
patent: 5369291 (1994-11-01), Swanson
patent: 5434588 (1995-07-01), Parker
patent: 5744864 (1998-04-01), Cillessen et al.
patent: 5850123 (1998-12-01), Potter
patent: 6408257 (2002-06-01), Harrington et al.
patent: 6503831 (2003-01-01), Speakman
patent: 2002/0105033 (2002-08-01), Zhang
patent: 2003/0012870 (2003-01-01), Sakurada
patent: 1134811 (2001-09-01), None
C. G. Granqvist, Progress in electrochromics : tungsten oxide revisited, Electrochimica Acta V. 44 (1999) pp. 3005-3015.
L. Bouteiller et al., Polymer-dispersed liquid crystals: Preparation, operation and application, Liquid Crystals, V. 21 (2) (1996) pp. 157-174.
D. Coates, Polymer-dispersed Liquid Crystals, J. Mater. Chem. V. 5 (12) (1995) pp. 2063-2072.
M. Hack et al., Double-injection field-effect transistor: A new type of solid-state device, Appl. Phys. Letters V. 48 (20) (May 19, 1986) pp. 1386-1388.
M. Hack et al., Double-injection field-effect transistor: A new type of solid-state device, Mat. Res. Soc. Symp. Proc., V. 70 (1986) pp. 643-646.
Y. Omura, Lateral Unidirectional Bipolar-Type Insulated-Gate Transistors, 14th Conf. on Solid State Devices, Tokyo, 1982, Japanese J. Appl. Phys. V. 22. Suppl. 22-1 (1983) pp. 263-266.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Transparent double-injection field-effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transparent double-injection field-effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transparent double-injection field-effect transistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3663298

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.