Compositions – Electrically conductive or emissive compositions – Metal compound containing
Patent
1993-10-27
1995-04-18
Lieberman, Paul
Compositions
Electrically conductive or emissive compositions
Metal compound containing
252520, 423624, H01B 100, H01B 106, H01B 108
Patent
active
054076021
ABSTRACT:
Applicant has discovered that aliovalently doped gallium-indium-oxide (GaInO.sub.3) can achieve electrical conductivity comparable to wide band-gap semiconductors presently in use while exhibiting enhanced transparency and improved index matching. The material can be doped to resistivity of less than 10 milliohm-cm by small quantities of aliovalent dopants, such as tetravalent atoms. It has a refractive index of about 1.6 and can be deposited on glass substrates in polycrystalline films.
REFERENCES:
patent: 3814996 (1974-06-01), Enstrom et al.
patent: 3895131 (1975-07-01), Herbert
Shannon et al "Synthesis & Structure of Phases in the In.sub.2 O.sub.3 -Ga.sub.2 O.sub.3 System" J. Inorg. Nucl. Chem. vol 30 pp. 1389-1398 1968.
Macdonald "Preparation & Crystal Chemistry of Some Mixed Metal Sesquioxides . . . " J. Inorg. Nucl. Chem. vol 29 pp. 661-671 1967.
Marezio "High-Pressure Phases of Indium Gallate (InGaO.sub.3) and Indium Oxide . . . " Collog. Int. Cent. nat. Rech. Sci. vol 188 1970 Abstract Only.
Marezio "Oxides at High Pressure" Trans. Amer. Crystallogr. Ass. vol 5 pp. 29-37 1969 Abstract Only.
AT&T Corp.
Books Glen E.
Kopec M.
Lieberman Paul
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