Transparent conductive thin film, process for producing the...

Compositions – Electrically conductive or emissive compositions – Metal compound containing

Reexamination Certificate

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C252S520500, C428S918000

Reexamination Certificate

active

11447870

ABSTRACT:
A transparent conductive thin film which can be produced easily by sputtering or the like with a sintered target, needs no post-treatment such as etching or grinding, is low in resistance and excellent in surface smoothness, and has a high transmittance in the low-wavelength region of visible rays; and transparent, electroconductive substrate for a display panel and an organic electroluminescence device excellent in light-emitting characteristics, both including the transparent conductive thin film. More particularly, a transparent conductive thin film comprising indium oxide as the major component and silicon as a dopant, having a substantially amorphous structure, wherein silicon is incorporated at 0.5 to 13% by atom on indium and silicon totaled; and a transparent conductive thin film comprising indium oxide as the major component and tungsten and germanium, wherein tungsten is incorporated at a W/In atomic ratio of 0.003 to 0.047 and germanium is incorporated at a Ge/In atomic ratio of 0.001 to 0.190.

REFERENCES:
patent: 62-202415 (1987-09-01), None
patent: 3-64450 (1991-03-01), None
patent: 4-48516 (1992-02-01), None
patent: 6-234521 (1994-08-01), None
patent: 10-162959 (1998-06-01), None
patent: 11-323531 (1999-11-01), None
patent: 2000-144393 (2000-05-01), None
patent: 2001-43980 (2001-02-01), None
patent: 2004-050643 (2004-02-01), None
Toshiro Maruyama, et al.,Germanium-and Silicon-doped Indium-oxide Thin Films Prepared by Radio-frequency Magnetron Sputtering, Appl. Phys. Lett., vol. 64, No. 11, Mar.14, 1994, pp. 1395-1397.

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