Transparent conductive film, sputtering target and transparent c

Details Transparent conductive film, sputtering target and transparent c Transparent conductive film, sputtering target and transparent c

1998-10-21

2000-03-28

Kopec, Mark

Compositions

Electrically conductive or emissive compositions

Metal compound containing

252512, 2525181, 2525211, 2041911, 20429812, 20429813, H01B 106, C23C 1400

Patent

active

060427523

ABSTRACT:
A transparent conductive film of tin oxide containing gallium and indium, which contains, when gallium is calculated as Ga.sub.2 O.sub.3, indium is calculated as In.sub.2 O.sub.3 and tin is calculated as SnO.sub.2, gallium in an amount of from 0.1 to 30 mol % and indium in an amount of from 0.1 to 30 mol %, based on the total amount of Ga.sub.2 O.sub.3, In.sub.2 O.sub.3 and SnO.sub.2, a sputtering target and a transparent conductive film bonded substrate. The transparent conductive film of the present invention exhibits chemical resistance and abrasion resistance.

REFERENCES:
patent: 5473456 (1995-12-01), Cava et al.
Edwards, D.D. et al, "A New Transparent Conducting Oxide in the Ca.sub.2 O.sub.3 -In.sub.2 O.sub.3 -SnO.sub.2 System", vol. 70, No. 13, Appliied Physics Letters (USA) American Institute of Physics (1997), p. 1706-1708.

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