Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-06-22
2008-09-02
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S449000, C257S450000, C257S451000, C257S452000, C257S453000, C257S454000, C257S455000, C257S456000, C257S457000, C257S749000
Reexamination Certificate
active
07420215
ABSTRACT:
A transparent conductive film substantially made from In2O3, SnO2and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.
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Inoue Kazunori
Ishiga Nobuaki
Kawase Kazumasa
Nagayama Kensuke
Takeguchi Toru
Mitsubishi Electric Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Soward Ida M
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