Stock material or miscellaneous articles – Composite – Of inorganic material
Reexamination Certificate
2011-01-11
2011-01-11
Shewareged, Betelhem (Department: 1785)
Stock material or miscellaneous articles
Composite
Of inorganic material
C428S412000, C427S109000
Reexamination Certificate
active
07867636
ABSTRACT:
A ZnO-based transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions. The transparent conductive film produced by growing ZnO doped with a group III element oxide on a substrate has a ZnO (002) rocking curve full width at half maximum of about 13.5° or more. ZnO is doped with a group III element oxide so that the ratio of the group III element oxide in the transparent conductive film is about 7% to about 40% by weight. The transparent conductive film is formed on the substrate with a SiNx thin film provided therebetween. The transparent conductive film is formed on the substrate by a thin film formation method with a bias voltage applied to the substrate.
REFERENCES:
patent: 3471721 (1969-10-01), Moore
patent: 3846649 (1974-11-01), Lehmann et al.
patent: 4297189 (1981-10-01), Smith et al.
patent: 4330596 (1982-05-01), Van Assche
patent: 5458753 (1995-10-01), Sato et al.
patent: 5804466 (1998-09-01), Arao et al.
patent: 6252247 (2001-06-01), Sakata et al.
patent: 6727522 (2004-04-01), Kawasaki et al.
patent: 7064346 (2006-06-01), Kawasaki et al.
patent: 7118936 (2006-10-01), Kobayashi et al.
patent: 2002/0158236 (2002-10-01), Kikkawa et al.
patent: 2003/0186088 (2003-10-01), Kato et al.
patent: 2005/0093396 (2005-05-01), Larson et al.
patent: 2008/0050595 (2008-02-01), Nakagawara et al.
patent: 3639508 (1987-05-01), None
patent: 04-324141 (1992-11-01), None
patent: 06-187833 (1994-07-01), None
patent: 07-106615 (1995-04-01), None
patent: 07-249316 (1995-09-01), None
patent: 08-050815 (1996-02-01), None
patent: 11-067459 (1999-03-01), None
patent: 11-233800 (1999-08-01), None
patent: 11-284209 (1999-10-01), None
patent: 2000-150900 (2000-05-01), None
patent: 2000-195101 (2000-07-01), None
patent: 2000-276943 (2000-10-01), None
patent: 2001-176673 (2001-06-01), None
patent: 2002-114598 (2002-04-01), None
patent: 2003-142169 (2003-05-01), None
patent: 2004-099412 (2004-04-01), None
patent: 2004-296616 (2004-10-01), None
patent: 2006-005115 (2006-01-01), None
patent: 01/56927 (2001-08-01), None
patent: 2007/080738 (2007-07-01), None
Fukahori et al.; “Transparent Conductive Film and Method of Producing Transparent Conductive Film”; U.S. Appl. No. 12/500,694, filed Jul. 10, 2009.
Official Communication issued in corresponding Chinese Patent Application No. 200680018062.9, mailed on May, 25, 2010.
Yang et al., “Effects of Substrate Temperature and Sputtering Bias-voltage on ZnO:AI Film Structure and Photoelectric Properties”, Electronic Components & Materials, Jul. 2004, vol. 23, No. 7. pp. 31-34.
Kishimoto Yutaka
Nakagawara Osamu
Seto Hiroyuki
Keating & Bennett LLP
Murata Manufacturing Co. Ltd.
Reddy Sathavaram I
Shewareged Betelhem
LandOfFree
Transparent conductive film and method for manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transparent conductive film and method for manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transparent conductive film and method for manufacturing the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2707959