Transparent conductive film

Details Transparent conductive film Transparent conductive film

2008-03-25

2008-03-25

Pham, Hoai v (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S449000, C257SE31126

Reexamination Certificate

active

07348649

ABSTRACT:
The present invention provides a transparent conductive film having: a transparent base film; a transparent SiOxthin film having a thickness of from 10 to 100 nm, a refractive index of from 1.40 to 1.80 and an average surface roughness Ra of from 0.8 to 3.0 nm, wherein x is from 1.0 to 2.0; and a transparent conductive thin film including an indium-tin complex oxide, which has a thickness of from 20 to 35 nm and a ratio of SnO2/(In2O3+SnO2) of from 3 to 15 wt %, wherein the transparent conductive thin film is disposed on one side of the transparent base film through the transparent SiOxthin film.

REFERENCES:
patent: 6657271 (2003-12-01), Katsuragawa
patent: 02-066809 (1990-03-01), None
patent: 6-222352 (1994-08-01), None
patent: 10-330916 (1998-12-01), None
patent: 2000-81952 (2000-03-01), None
patent: 2002-326301 (2002-11-01), None
Office Action of Corresponding Chinese Patent Application 2005-10076019.5 issued Dec. 15, 2006.

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