Transmitter using gallium arsenide FET with means for controllin

Details Transmitter using gallium arsenide FET with means for controllin Transmitter using gallium arsenide FET with means for controllin

1990-01-26

1991-09-17

Kuntz, Curtis

Telecommunications

Transmitter

Power control, power supply, or bias voltage supply

330277, H01Q 1112

Patent

active

050502352

ABSTRACT:
A transmitter using a gallium arsenide FET in a power amplifier and having a biassing circuit for generating a gate biassing voltage for the FET, a first power supply for supplying a first power to the biassing circuit and a second power supply for supplying a second power to the power amplifier, the second power being higher in voltage than the first power and being produced at a time delay from production of the first power at a start condition of the transmitter, wherein the first power is supplied to the biassing circuit through a first diode with a voltage drop to thereby reduce the gate biassing voltage below a normal one so that an undesired signal is suppressed at the power amplifier. The second power is delivered to the biassing circuit through a second diode so that the biassing circuit is driven by the second power to produce the normal biassing voltage. Although a multistage amplifier is used for signal amplification prior to the power amplifier and is supplied with a power from the second power supply, a number of stages of the multistage amplifier is not necessary to be increased for attenuating the undesired signal at the start condition because of the signal suppression of the power amplifier.

REFERENCES:
patent: 4631736 (1986-12-01), Yamanoue et al.
patent: 4819272 (1989-04-01), Shimo et al.
patent: 4890069 (1989-12-01), Duffalo et al.
patent: 4912430 (1990-03-01), Frank
patent: 4973918 (1990-11-01), Schindler

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