Transmission mask with differential attenuation to improve...

Radiation imagery chemistry: process – composition – or product th – Plural exposure steps

Reexamination Certificate

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C430S322000, C430S311000, C430S005000

Reexamination Certificate

active

07807342

ABSTRACT:
An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.

REFERENCES:
patent: 4403336 (1983-09-01), Taniguchi et al.
patent: 2002/0132173 (2002-09-01), Rolfson
patent: 2004/0023134 (2004-02-01), Rolfson
patent: 2004/0146139 (2004-07-01), Morales

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