Transmission mask with differential attenuation to improve...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C716S030000, C378S034000, C378S035000

Reexamination Certificate

active

07052808

ABSTRACT:
An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.

REFERENCES:
patent: 5817438 (1998-10-01), Chen et al.
patent: 6114095 (2000-09-01), Nakabayashi et al.
patent: 6274281 (2001-08-01), Chen
patent: 6294295 (2001-09-01), Lin et al.
patent: 2002/0132173 (2002-09-01), Rolfson
patent: 2004/0023134 (2004-02-01), Rolfson
Kachwala, Nishrin; High Transmission attenuated PSM as a Viable Optical Extension Technique; Sep. 2001; Proc. SPIE vol. 4346, Optical Microlithography XlV, Christopher J. Progler: Ed., Abstract, pp. 807 and 811 only.

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