Transition metal doped ferromagnetic III-V nitride material...

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Reexamination Certificate

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C428S697000, C428S704000, C423S361000, C423S374000, C117S952000, C117S953000, C117S954000

Reexamination Certificate

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06955858

ABSTRACT:
Transition metal doped II–V nitride material films exhibit ferromagnetic properties at or above room temperature. A III–V nitride material film may be doped with a transition metal film in-situ during metal-organic chemical vapor deposition and/or by solid-state diffusion processes. Doping of the III–V nitride material films may proceed in the absence of hydrogen and/or in the presence of nitrogen. In some embodiments, transition metal-doped III–V nitride material films comprise carbon concentrations of at least 1017atoms per cubic centimeter.

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