Transit time diode with an input structure formed by a matrix of

Details Transit time diode with an input structure formed by a matrix of Transit time diode with an input structure formed by a matrix of

1980-08-25

1982-09-28

Clawson, Jr., Joseph E.

Oscillators

Relaxation oscillators

357 16, 357 55, 331107R, H01L 2990

Patent

active

043521150

ABSTRACT:
A semiconducting diode utilizing the transit time of electrical charge carriers in a semiconductor medium, having an input structure formed by a matrix of micropoints, said matrix consisting of a plurality of microscopic contacts separated by an insulating layer. The diameter of each contact is of the order of 0.5 to 5 micrometers, the distance between the closest contacts being of the order of 0.5 to 15 micrometers. The contacts are made of metal or of an alloy of low resistivity or of a semiconductor material generally doped more heavily than the layer of the semiconductor lying under the microscopic contact. The result of such a structure is an increase in efficiency attributable to the reduction in avalanche voltage or to a better injection by tunnel effect.

REFERENCES:
patent: 3544854 (1970-12-01), Cox et al.
patent: 3600705 (1971-08-01), Tantraporn et al.
patent: 3698941 (1972-10-01), De Nobel et al.
patent: 3706014 (1972-12-01), Dean

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