Transistors with substitutionally formed gate structures and met

Details Transistors with substitutionally formed gate structures and met Transistors with substitutionally formed gate structures and met

1998-12-18

2000-07-04

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438691, 438692, 438697, 438700, 438712, 438742, 438719, 438722, H01L 2100

Patent

active

060838361

ABSTRACT:
Transistors may be fabricated by isolating a first region (16) of a semiconductor layer from a second region (18) of the semiconductor layer (12). A first disposable gate structure (26) of the first transistor may be formed over the first region (16) of the semiconductor layer (12). The first disposable gate structure (26) may comprise a replaceable material. A second disposable gate structure (28) of the second complementary transistor may be formed over the second region (18) of the semiconductor layer (12). A replacement layer (70) may be formed over the first disposable gate structure (26). The replacement layer (70) may comprise a replacement material. At least a portion of the replaceable material of the first disposable gate structure (26) may be substitutionally replaced with the replacement material of the replacement layer (70) to form a first gate structure (80).

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1984 IEEE "A New Aluminum Pattern Formation Using Substitution Reaction of Aluminum for Polysilicon and Its Application to MOS Device Fabrication", pp. 828-832 (Yukio Fukuda, Member, IEEE, Shigeto Kohda, Member, IEEE, and Yoshitaka Kitano).
Journal of Applied Physics, vol. 46, No. 11, Nov. 1975 "Interaction of Al Layers with Polycrystaline S i", pp. 4678-4684 (K. Nakamura, M-A. Nicolet, J.W. Mayer, R.J. Blattner and C.A. Evans Jr.).
J. Appl. Phys.51(3), Mar. 1980 "Grain Boundary Diffusion of Aluminum in Polycrystalline Silicon Films," pp. 1576-1581 (J.C.M. Hwang, P.S. Ho, J.E. Lewis and D.R. Campbell).

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