Transistors having bases with different shape top surfaces

Details Transistors having bases with different shape top surfaces Transistors having bases with different shape top surfaces

1993-01-29

1995-02-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG10, 148DIG11, 257579, 257588, 257592, H01L 21265

Patent

active

053895525

ABSTRACT:
A bipolar transistor is provided in which the emitters do not traverse the base but terminate inside the top surface of the base. Each emitter is L-shaped in some embodiments. The base top surface has a polygonal or circular outer boundary. The transistor has a long emitter perimeter available for base current flow and more than two emitter sides (e.g., five sides) available for base current flow. Further, the transistor has a large ratio of the emitter area to the base area. Consequently, the transistor has low noise, high gain, high frequency range, and a small size.

REFERENCES:
patent: 5139961 (1992-08-01), Solheim
patent: 5169794 (1992-12-01), Iranmanesh
patent: 5219784 (1993-06-01), Solheim
patent: 5234847 (1993-08-01), Iranmanesh
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A. Iranmanesh, M. Biswal and B. Bastani, Total System Solution with Advanced BiCMOS, Solid State Technology, Jul. 1992, pp. 37-40.
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G. Gonzalez, "Microwave transistor amplifier" (Prentice-Hall 1984), pp. 31-34.

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