Transistors and methods for making the same

Details Transistors and methods for making the same Transistors and methods for making the same

2007-03-13

2007-03-13

Dang, Trung (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With non-planar semiconductor surface

C257S615000, C257SE29033, C257SE29188, C438S312000, C438S320000

Reexamination Certificate

active

10859894

ABSTRACT:
Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound semiconductor composition layer doped to have the first charge carrier polarity and located on the second layer; a base electrode on the second layer; and a spacer ring interposed between and defining a charge carrier access path distance between the base electrode and the third layer, the path distance being within a range of between about 200 Å and about 1000 Å. Techniques for making apparatus. Apparatus is useful as a heterobipolar transistor, particularly for high frequency applications.

REFERENCES:
patent: 5166081 (1992-11-01), Inada et al.
patent: 6225241 (2001-05-01), Miyoshi
patent: 6310368 (2001-10-01), Yagura
patent: 6486532 (2002-11-01), Racanelli
patent: 2004/0046182 (2004-03-01), Chen et al.
patent: 2005/0032323 (2005-02-01), Chen et al.
Oka et al., Small-Scaled InGaP/GaAs HBT's with WSi/Ti Base Electrode and Buried SiO2, IEEE Transactions On Electron Devices, vol. 45, No. 11, pp. 2276-2282 (Nov. 1998).
U.S. Appl. No. 10/243,369, filed Sep. 13, 2002, Chen et al.
U.S. Appl. No. 10/430,499, filed May 6, 2003, Chua.

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