1985-03-21
1987-06-23
Edlow, Martin H.
357 15, 357 68, 357 41, H01L 2980, H01L 2948, H01L 2348, H01L 2702
Patent
active
046757120
ABSTRACT:
A transistor having a support substrate of semiconductor material and continuous elongate electrodes--a source electrode a drain electrode and a gate electrode. Gain improvement is achieved by dividing the structure into active and passive sites and by providing inductive coupling to supply power feedback to the gate electrode and thereby to sustain and enhance guided wave propagation. At each active site, protrusions extend from the source electrode, and protrusions extend from the drain electrode. The parasitic capacitance at each passive site is thus minimized. The source and drain protrusions are connected by channels in the underlying semiconductor substrate and the conductivity of these channels controlled by gate operation. The drain electrode has a meander configuration to provide inductive coupling to the gate electrode and balance the waves on drain and gate. To reduce resistive losses, the gate electrode is of larger cross-section at passive sites. Also the gate electrode is of T-section shape at each active site. The upper extremity of this T-section may be offset towards the source electrode to increase breakdown threshold.
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Holden Anthony J.
Oxley Christopher H.
Edlow Martin H.
Limanek Robert P.
Plessey Overseas Limited
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