Transistors

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 15, 357 68, 357 41, H01L 2980, H01L 2948, H01L 2348, H01L 2702

Patent

active

046757120

ABSTRACT:
A transistor having a support substrate of semiconductor material and continuous elongate electrodes--a source electrode a drain electrode and a gate electrode. Gain improvement is achieved by dividing the structure into active and passive sites and by providing inductive coupling to supply power feedback to the gate electrode and thereby to sustain and enhance guided wave propagation. At each active site, protrusions extend from the source electrode, and protrusions extend from the drain electrode. The parasitic capacitance at each passive site is thus minimized. The source and drain protrusions are connected by channels in the underlying semiconductor substrate and the conductivity of these channels controlled by gate operation. The drain electrode has a meander configuration to provide inductive coupling to the gate electrode and balance the waves on drain and gate. To reduce resistive losses, the gate electrode is of larger cross-section at passive sites. Also the gate electrode is of T-section shape at each active site. The upper extremity of this T-section may be offset towards the source electrode to increase breakdown threshold.

REFERENCES:
patent: 3516021 (1970-06-01), Kohn
patent: 3737743 (1973-06-01), Goronkin et al.
patent: 4065782 (1977-12-01), Gray et al.
patent: 4107720 (1978-08-01), Pucel et al.
patent: 4297718 (1981-10-01), Nishizawa et al.
patent: 4536942 (1985-08-01), Chao et al.
patent: 4549197 (1985-10-01), Brehm et al.
Plessey Allen Clarke Research Centre Annual Review 1984, pub. Jan. 85, "Travelling Wave Gallium Arsenide" by A. J. Holden and C. H. Oxley.
A. S. Podgorski and L. Y. Wei, Theory of Travelling Wave Transistors, IEEE Trans., ED.29, pp. 1845-1853, 1982, and references therein.
Y. Ayasli, L. D. Reynolds, J. L. Vorhaus and L. K. Hanes., 2-20 GH.sub.z GaAs Travelling Wave Amplifier. IEEE Trans., MTT 32. pp. 71-77, 1984.
E. W. Strid and K. R. Gleason, A DC-12 Monolithic GaAs FET Distributed Amplifier, IEEE Trans., MTT 30. pp. 969-975, 1982.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistors will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-724945

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.